Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser

XU Ming; SHI Wei; JJIANG Zenggong; WANG Shaoqiang; FU Zhanglong

Plasma Science and Technology > 2011 > 13(6): 672-675.

XU Ming, SHI Wei, JJIANG Zenggong, WANG Shaoqiang, FU Zhanglong. Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser[J]. Plasma Science and Technology, 2011, 13(6): 672-675.

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Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser

1 Applied Physics Department, Xi’an University of Technology, Xi’an 710048, China 2 State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China

Funds: supported by the Key Project of National Natural Science Foundation of China under Grant No.50837005, the National Science Foundation of China under Grant No.10876026, No.51107099, the Foundation of the State Key Laboratory of Electrical Insulation for Power Equipment under Grant No.EIPE09203, the Natural Science Foundation of Shaanxi Province under Grant No.2010JM7003, the Scientific Research Program Funded by Shaanxi Provincial Education Department under Grant No.11JK0540, and the Foundation for Outstanding Doctoral Dissertation of Xi’an University of Technology (105-210904).

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Received Date: August 04, 2011

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Abstract

Abstract

Semi-insulating gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) have great potential for high voltage switching application, however, the utility is restricted by surface flashover which would result in breakdown. In this paper, a model of photo-activated charge wave was proposed based on the theory of photo-activated charge domain (PACD) in GaAs PCSS, and moderate suppression of PACD formation by loading the semiconductor surface with dielectric material was investigated theoretically and experimentally. Current as high as 3.7 kA was obtained at 28 kV, implying that this method can effectively inhibit the surface flashover and improve the service life of dc charged GaAs PCSS.
- GaAs,
- photoconductive switches,
- photo-activated charge domain,
- longevity

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