Advanced Search+
HUANG Zhongde(黄忠德), YAO Xueling(姚学玲), CHEN Jingliang(陈景亮), QIU Aici(邱爱慈). Experimental Research of ZnO Surface Flashover Trigger Device of Pseudo-Spark Switch[J]. Plasma Science and Technology, 2014, 16(5): 506-511. DOI: 10.1088/1009-0630/16/5/11
Citation: HUANG Zhongde(黄忠德), YAO Xueling(姚学玲), CHEN Jingliang(陈景亮), QIU Aici(邱爱慈). Experimental Research of ZnO Surface Flashover Trigger Device of Pseudo-Spark Switch[J]. Plasma Science and Technology, 2014, 16(5): 506-511. DOI: 10.1088/1009-0630/16/5/11

Experimental Research of ZnO Surface Flashover Trigger Device of Pseudo-Spark Switch

Funds: supported by National Natural Science Foundation of China (No. 51177131) and the New Century Talent Foundation of Ministry of Education of China (NCET-08-0438)
More Information
  • Received Date: January 02, 2012
  • Pseudo-spark switch (PSS) is one of the most widely used discharge switches for pulse power technology. It has many special characteristics such as reliability in a wide voltage range, small delay time, as well as small delay jitter. In this paper, the measuring method for the initial plasma of ZnO surface flashover triggering device of PSS is studied and the results of the measurement show that the electron emission charge is mainly influenced by trigger voltage, gas pressure and DC bias voltage. When the bias voltage increases from 2 kV to 6 kV with the gap distance fixed at 3 mm, the electron emission charge changes from 2 μC to about 6 μC. When the gap distance changes from 3 mm to 5 mm with the bias voltage fixed at 2 kV, the electron emission charge increases from 1.5 μC to 2.5 μC. When the gap distance is 4 mm, the hold-off voltage of PSS is 45 kV at gas pressure of 2 Pa, the minimum operating voltage is less than 1 kV. So, the operating scope is from 2.22% to 99% of its self-breakdown voltage. The discharging delay time decreases from 450 ns to 150 ns when the trigger pulse voltage is 1 kV and the discharging voltage is changed from 1 kV to 12 kV. When the trigger pulse voltage is 6 kV, the discharging delay time is less than 100 ns and changes from 100 ns to 50 ns, and the delay jitters are less than 30 ns.
  • 1.Frank K, Dewald E, Bickes C, et al. 1999, IEEE Trans. Plasma Sci., 27: 1008
    2. Tkotz R, Gortler A, Christiansen J, et al. 1979, IEEE Trans. Plasma Sci., 23: 309
    3. Green A J, Chritopoulos C. 1979, IEEE Trans. Plasma Sci., PS-7: 111
    4. Jan Stroh, Wemer Hartmann. 1995, IEEE Trans. Plasma Sci., 233: 335
    5. Tkotz R, Schlaug M, Christiansen J, G.ortler A. 1996, IEEE Trans. Plasma Sci., 24: 53
    6. Legentil M, Postel C, Puech V, Thomaz J C. 1995, IEEE Trans. Plasma Sci., 23: 330
    7. Miller H C. 1989, IEEE Trans. Electrical Insulation, 24: 765
    8. Gortler A, Christiansen J, Dotzer R. 1989, IEEE Trans. Plasma Sci., 17: 762
    9. Yao Xueling, Chen Jingliang, Zeng Zhengzhong. 2007, Plasma Science and Technology, 9: 496
    10. Anderson R A, Brainard J P. 1980, Appl. Phys., 51: 1414
  • Related Articles

    [1]Yaroslav MURZAEV, Gennadii LIZIAKIN, Andrey GAVRIKOV, Rinat TIMIRKHANOV, Valentin SMIRNOV. A comparison of emissive and cold floating probe techniques for electric potential measurements in rf inductive discharge[J]. Plasma Science and Technology, 2019, 21(4): 45401-045401. DOI: 10.1088/2058-6272/aaf250
    [2]Chundong HU (胡纯栋), Yahong XIE (谢亚红), Yongjian XU (许永建), Caichao JIANG (蒋才超), Jianglong WEI (韦江龙), Yuming GU (顾玉明), Qinglong CUI (崔庆龙), Lizhen LIANG (梁立振), Shiyong CHEN (陈世勇), Yuanlai XIE (谢远来). Achievement of 1000 s plasma generation of RF source for neutral beam injector[J]. Plasma Science and Technology, 2019, 21(2): 22001-022001. DOI: 10.1088/2058-6272/aaf1e0
    [3]Chenfan YU (余晨帆), Xin ZHOU (周鑫), Dianzheng WANG (王殿政), Neuyen VAN LINH, Wei LIU (刘伟). Study on the RF inductively coupled plasma spheroidization of refractory W and W-Ta alloy powders[J]. Plasma Science and Technology, 2018, 20(1): 14019-014019. DOI: 10.1088/2058-6272/aa8e94
    [4]Vadym PRYSIAZHNYI, Pavel SLAVICEK, Eliska MIKMEKOVA, Milos KLIMA. Influence of Chemical Precleaning on the Plasma Treatment Efficiency of Aluminum by RF Plasma Pencil[J]. Plasma Science and Technology, 2016, 18(4): 430-437. DOI: 10.1088/1009-0630/18/4/17
    [5]LIU Zhiwei (刘智惟), BAO Weimin (包为民), LI Xiaoping (李小平), LIU Donglin (刘东林), ZHOU Hui (周辉). Influence of Plasma Pressure Fluctuation on RF Wave Propagation[J]. Plasma Science and Technology, 2016, 18(2): 131-137. DOI: 10.1088/1009-0630/18/2/06
    [6]CHEN Jiale (陈佳乐), GAO Zhe (高喆). Tokamak Plasma Flows Induced by Local RF Forces[J]. Plasma Science and Technology, 2015, 17(10): 809-816. DOI: 10.1088/1009-0630/17/10/01
    [7]Djelloul MENDIL, Hadj LAHMAR, Laifa BOUFENDI. Spatial Evolution Study of EEDFs and Plasma Parameters in RF Stochastic Regime by Langmuir Probe[J]. Plasma Science and Technology, 2014, 16(9): 837-842. DOI: 10.1088/1009-0630/16/9/06
    [8]WANG Songbai(王松柏), LEI Guangjiu(雷光玖), LIU Dongping(刘东平), YANG Size(杨思泽). Balmer H α, H β and H γ Spectral Lines Intensities in High-Power RF Hydrogen Plasmas[J]. Plasma Science and Technology, 2014, 16(3): 219-222. DOI: 10.1088/1009-0630/16/3/08
    [9]FEI Xiaomeng (费小猛), Shin-ichi KURODA, Tamio MORI, Katsuhiko HOSOI. High-Density Polyethylene (HDPE) Surface Treatment Using an RF Capacitive Atmospheric Pressure Cold Ar Plasma Jet[J]. Plasma Science and Technology, 2013, 15(6): 577-581. DOI: 10.1088/1009-0630/15/6/16
    [10]WANG Shuai(王帅), XU Xiang(徐翔), WANG Younian(王友年). A One-Dimensional Hybrid Simulation of DC/RF Combined Driven Capacitive Plasma[J]. Plasma Science and Technology, 2012, 14(1): 32-36. DOI: 10.1088/1009-0630/14/1/08

Catalog

    Article views (223) PDF downloads (1066) Cited by()

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return