Ion-Banana-Orbit-Width Effect on Bootstrap Current for Small Magnetic Islands

QU Hongpeng (曲洪鹏)

doi:10.1088/1009-0630/15/9/03

Plasma Science and Technology > 2013 > 15(9): 852-856. > DOI: 10.1088/1009-0630/15/9/03

QU Hongpeng (曲洪鹏). Ion-Banana-Orbit-Width Effect on Bootstrap Current for Small Magnetic Islands[J]. Plasma Science and Technology, 2013, 15(9): 852-856. DOI: 10.1088/1009-0630/15/9/03

Citation:

QU Hongpeng (曲洪鹏). Ion-Banana-Orbit-Width Effect on Bootstrap Current for Small Magnetic Islands[J]. Plasma Science and Technology, 2013, 15(9): 852-856. DOI: 10.1088/1009-0630/15/9/03

Citation:

QU Hongpeng (曲洪鹏). Ion-Banana-Orbit-Width Effect on Bootstrap Current for Small Magnetic Islands[J]. Plasma Science and Technology, 2013, 15(9): 852-856. DOI: 10.1088/1009-0630/15/9/03

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Ion-Banana-Orbit-Width Effect on Bootstrap Current for Small Magnetic Islands

QU Hongpeng (曲洪鹏)(QU Hongpeng (曲洪鹏))

Southwestern Institute of Physics, Chengdu 610041, China

Funds: supported by the National Magnetic Confinement Fusion Science Program of China (Nos.2011GB105002 and 2010GB106006) and National Natural Science Foundation of China (No.11175057)

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Received Date: May 06, 2012

Graphical Abstract

Abstract

Abstract

A simple and direct theoretical method has been proposed to investigate the so- called ion-banana-orbit-width (IBW) effect on the bootstrap current in the region of magnetic islands generated by the neoclassical tearing mode (NTM). The result shows that, when the IBW approaches the island width, the (ion) bootstrap current can be partly restored inside the island while the pressure profile is flattened. This can lead to the reduction of the bootstrap current drive on the NTM. The strength of the IBW effect on the NTM is related to the safety factor and the inverse aspect ratio on the rational surface.
- NTM,
- bootstrap current,
- ion-banana-orbit-width,
- magnetic island

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