Advanced Search+
LI Zebin(李泽斌), WU Zhonghang(吴忠航), JU Jiaqi(居家奇), HE Kongduo(何孔多), CHEN Zhenliu(陈枕流), YANG Xilu(杨曦露), YAN Hang(颜航), OU Qiongrong(区琼荣), LIANG Rongqing(梁荣庆). Enhanced Work Function of Al-Doped Zinc-Oxide Thin Films by Oxygen Inductively Coupled Plasma Treatment[J]. Plasma Science and Technology, 2014, 16(1): 79-82. DOI: 10.1088/1009-0630/16/1/17
Citation: LI Zebin(李泽斌), WU Zhonghang(吴忠航), JU Jiaqi(居家奇), HE Kongduo(何孔多), CHEN Zhenliu(陈枕流), YANG Xilu(杨曦露), YAN Hang(颜航), OU Qiongrong(区琼荣), LIANG Rongqing(梁荣庆). Enhanced Work Function of Al-Doped Zinc-Oxide Thin Films by Oxygen Inductively Coupled Plasma Treatment[J]. Plasma Science and Technology, 2014, 16(1): 79-82. DOI: 10.1088/1009-0630/16/1/17

Enhanced Work Function of Al-Doped Zinc-Oxide Thin Films by Oxygen Inductively Coupled Plasma Treatment

Funds: supported by National Natural Science Foundation of China (Nos.11005021, 51177017 and 11175049), the Fudan University Excellent Doctoral Research Program (985 Project) and the Ph.D Programs Foundation of Ministry of Education of China (No.20120071110031)
More Information
  • Received Date: August 29, 2013
  • Al-doped zinc-oxide (AZO) thin films treated by oxygen and chlorine inductively coupled plasma (ICP) were compared. Kelvin probe (KP) and X-ray photoelectron spectroscopy (XPS) were employed to characterize the effect of treatment. The results of KP measurement show that the surface work function of AZO thin films can increase up to 5.92 eV after oxygen ICP (O-ICP)’s treatment, which means that the work function was increased by at least 1.1 eV. However, after the treatment of chlorine ICP (Cl-ICP), the work function increased to 5.44 eV, and the increment was 0.6 eV. And 10 days later, the work function increment was still 0.4 eV after O-ICP’s treatment, while the work function after Cl-ICP’s treatment came back to the original value only after 48 hours. The XPS results suggested that the O-ICP treatment was more effective than Cl-ICP for enhancing the work function of AZO films, which is well consistent with KP results.
  • 1 Tang C W, Vanslyke S A. 1987, Appl. Phys. Lett., 51:913;
    2 Zhao L, Zhou Z, Peng H, et al. 2005, Appl. Surf. Sci.,252: 385;
    3 Bernede J C. 2008, J. Chil. Chem. Soc., 53: 1549;
    4 Kamtekar K T, Monkman A P, Bryce M R. 2010, Adv.Mater., 22: 572;
    5 Kim H, Pique A, Horwitz J S, et al. 1999, Appl. Phys.Lett., 74: 3444;
    6 Reddy V S, Das K, Dhar A, et al. 2006, Semicond. Sci.Technol., 21: 1747;
    7 Tuna O, Selamet Y, Aygun G, et al. 2010, J. Phys. D:Appl. Phys., 43: 055402;
    8 Lee S T, Gao Z Q, Hung L S. 1999, Appl. Phys. Lett.,75: 1404;
    9 Jo S J, Kim C S, Ryu S Y, et al. 2008, J. Appl. Phys.,103: 114502;
    10 Jiang X,Wong F L, Fung M K, et al. 2003, Appl. Phys.Lett., 83: 1875;
    11 Kim H, Horwitz J S, Kim W H, et al. 2002, Thin Solid Films, 420-421: 539;
    12 Kim T W, Choo D C, No Y S, et al. 2006, Appl. Surf.Sci., 253: 1917;
    13 Hotchkiss P J, Li H, Paramonov P B, et al. 2009, Adv.Mater., 21: 4496;
    14 Cattin L, Dahou F, Lare Y, et al. 2009, J. Appl. Phys.,105: 034507;
    15 Hong S J, Heo G S, Park J W, et al. 2007, J. Nanosci.Nanotechnol., 7: 4077;
    16 Wang W, Feng Q, Jiang K, et al. 2011, Appl. Surf.Sci., 257: 3884;
    17 Feng Q, Wang W, Jiang K, et al. 2012, J. Mater. Sci.:Mater. Electron, 23: 267;
    18 Park J H, Ahn K J, Park K I, et al. 2010, J. Phys. D:Appl. Phys., 43: 115101;
    19 Helander M G, Wang Z B, Qiu J, et al. 2011, Science,332: 944 20 Cao X A, Zhang Y Q. 2012, Appl. Phys. Lett., 100:183304;
    21 Yu H Y, Feng X D, Grozea D, et al. 2001, Appl. Phys.Lett., 78: 2595;
    22 Li W, Li D Y. 2005, J. Chem. Phys., 122: 064708 23 Song G L, Haddad D. 2011, Mater. Chem. Phys., 125:548;
    24 Xue M S, Wu H N, Qu J F, et al. 2012, J. Appl. Phys.,111: 123714
  • Related Articles

    [1]Ying Wang, Nie Chen, Jingfeng Yao, Evgeniy Bogdanov, Anatoly Kudryavtsev, Chengxun Yuan, Zhongxiang Zhou. Towards the creation of an inverse electron distribution function in two-chamber inductively coupled plasma discharges[J]. Plasma Science and Technology. DOI: 10.1088/2058-6272/adb895
    [2]Haifeng ZHANG (章海锋), Hao ZHANG (张浩). The features of band structures for woodpile three-dimensional photonic crystals with plasma and function dielectric constituents[J]. Plasma Science and Technology, 2018, 20(10): 105001. DOI: 10.1088/2058-6272/aacf87
    [3]Ling ZHANG (张玲), Guo CHEN (陈果), Zhibing HE (何智兵), Xing AI (艾星), Jinglin HUANG (黄景林), Lei LIU (刘磊), Yongjian TANG (唐永建), Xiaoshan HE (何小珊). Investigation of working pressure on the surface roughness controlling technology of glow discharge polymer films based on the diagnosed plasma[J]. Plasma Science and Technology, 2017, 19(7): 75505-075505. DOI: 10.1088/2058-6272/aa6618
    [4]Zhiyu YAN (严志宇), Xin WANG (王鑫), Bing SUN (孙冰), Mi WEN (文密), Yue HAN (韩月). Catalytic technology for water treatment by micro arc oxidation on Ti–Al alloy[J]. Plasma Science and Technology, 2017, 19(3): 35501-035501. DOI: 10.1088/2058-6272/19/3/035501
    [5]ZHANG Zhihui(张志辉), WU Xuemei(吴雪梅), NING Zhaoyuan(宁兆元). The Effect of Inductively Coupled Discharge on Capacitively Coupled Nitrogen-Hydrogen Plasma[J]. Plasma Science and Technology, 2014, 16(4): 352-355. DOI: 10.1088/1009-0630/16/4/09
    [6]BAI Yang (柏洋), JIN Chenggang (金成刚), YU Tao (余涛), WU Xuemei (吴雪梅), et al.. Experimental Characterization of Dual-Frequency Capacitively Coupled Plasma with Inductive Enhancement in Argon[J]. Plasma Science and Technology, 2013, 15(10): 1002-1005. DOI: 10.1088/1009-0630/15/10/08
    [7]GAO Huanzhong (高欢忠), HE Long (何龙), HE Zhijiang (何志江), LI Zebin (李泽斌), et al.. Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation[J]. Plasma Science and Technology, 2013, 15(8): 791-793. DOI: 10.1088/1009-0630/15/8/14
    [8]I. M. ULANOV, M. V. ISUPOV, A. Yu LITVINSEV, P. A. MISCHENKO. Plasma-Chemical Synthesis of Oxide Powders Using Transformer-Coupled Discharge[J]. Plasma Science and Technology, 2013, 15(4): 386-390. DOI: 10.1088/1009-0630/15/4/14
    [9]ZHU Lingyu (祝令瑜), JI Shengchang (汲胜昌), HUI Sisi (惠思思), GUO Jun (郭俊), LI Yansong (李岩松), FU Chenzhao (傅晨钊). Application of Excitation Function to the Prediction of RI Level Caused by Corona Discharge[J]. Plasma Science and Technology, 2012, 14(12): 1091-1098. DOI: 10.1088/1009-0630/14/12/10
    [10]ZHENG Yanbin (郑艳彬), LI Guang (李光), WANG Wenlong (王文龙), LI Xiuchang (李秀昌), JIANG Zhigang(姜志刚). Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films[J]. Plasma Science and Technology, 2012, 14(10): 915-918. DOI: 10.1088/1009-0630/14/10/11

Catalog

    Article views (836) PDF downloads (1918) Cited by()

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return