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XI Yanbin (奚衍斌), LIU Yue (刘悦). FDTD Simulation on Power Absorption of Terahertz Electromagnetic Waves in Dense Plasma[J]. Plasma Science and Technology, 2012, 14(1): 5-8. DOI: 10.1088/1009-0630/14/1/02
Citation: XI Yanbin (奚衍斌), LIU Yue (刘悦). FDTD Simulation on Power Absorption of Terahertz Electromagnetic Waves in Dense Plasma[J]. Plasma Science and Technology, 2012, 14(1): 5-8. DOI: 10.1088/1009-0630/14/1/02
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FDTD Simulation on Power Absorption of Terahertz Electromagnetic Waves in Dense Plasma

  • Key Laboratory of Materials Modification by Laser, Electron, and Ion Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China

Funds: supported by National Natural Science Foundation of China (Nos. 10675029, 11075030) and National Basic Research Program of China (Nos.2008CB717801, 2008CB787103, 2009GB105004, 2010GB106002), and Fundamental Research Funds for the Central Universities.
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  • Received Date: August 05, 2011
    Graphical Abstract
    • Abstract
  • A finite difference time domain (FDTD) method is used to numerically study the power absorption of broadband terahertz (0.1-1.5THz) electromagnetic waves in a partially ionized uniform plasma layer under low pressure and atmosphere discharge conditions. The power absorption spectra are calculated numerically and the numerical results are in accordance with the analytic results. Meanwhile, the effects on the power absorption are calculated with different applied magnetic fields, collision frequencies and electron number densities, which depend strongly on those parameters. Under the dense strongly magnetized plasma conditions, the absorption gaps appear in the range of 0.3-0.36THz, and are enlarged with the increasing electron number density.
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    1. Yan, J., Shen, S., Sun, G. et al. Revealing phase transitions and instabilities in pseudospark discharges. High Voltage, 2023, 8(4): 819-832. DOI:10.1049/hve2.12281
    2. Yan, J., Shen, S., Ding, W. et al. A Miniaturized Sealed-Off Double-Gap Pseudospark Switch for High Power and High Repetition Rate Pulsed Discharge Applications. IEEE Transactions on Industry Applications, 2023, 59(3): 3056-3066. DOI:10.1109/TIA.2023.3247401
    3. Sun, G., Wang, X., Ding, W. et al. Study on Pseudospark Switch Triggered by 532-nm Focused Laser. IEEE Transactions on Electron Devices, 2023, 70(2): 765-770. DOI:10.1109/TED.2022.3229279
    4. Yan, J., Shen, S., Ding, W. et al. Revealing pre-breakdown processes of a single-gap pseudospark switch triggered from the anode side. Vacuum, 2023. DOI:10.1016/j.vacuum.2022.111684
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    6. Yan, J., Wang, W., Shen, S. et al. Repetitive Operation and Insulation Recovery Characteristics of a Sealed-off Double-gap Pseudospark Switch. 2022. DOI:10.1109/CIEEC54735.2022.9846766
    7. Yan, J., Shen, S., Sun, G. et al. Characteristics of Triggering and Conduction of a Double-gap Pseudospark Switch | [双间隙伪火花开关的触发及导通特性]. Gaodianya Jishu/High Voltage Engineering, 2021, 47(8): 2799-2810. DOI:10.13336/j.1003-6520.hve.20200528025
    8. Yan, J., Shen, S., Sun, G. et al. Review on Physical Mechanisms and Applications of Pseudospark Discharge | [伪火花放电的物理机制与应用综述]. Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, 2021, 36(11): 2408-2423. DOI:10.19595/j.cnki.1000-6753.tces.200262
    9. Yan, J., Shen, S., Sun, G. et al. Influence of Trigger Injection on Performances of a Single-Gap Pseudospark Switch. IEEE Transactions on Electron Devices, 2021, 68(5): 2485-2491. DOI:10.1109/TED.2021.3068084

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