Modification of Optical Band-gap of Si Films after Ion Irradiation

ZHU Yabin(朱亚滨); WANG Zhiguang(王志光); SUN Jianrong(孙建荣); YAO Cunfeng(姚存峰); WEI Kongfang(魏孔芳); GOU Jie(缑洁); MA Yizhun(马艺准); SHEN Tielong(申铁龙); PANG Lilong(庞立龙); SHENG Yanbin

doi:10.1088/1009-0630/14/7/15

Plasma Science and Technology > 2012 > 14(7): 632-635. > DOI: 10.1088/1009-0630/14/7/15

ZHU Yabin(朱亚滨), WANG Zhiguang(王志光), SUN Jianrong(孙建荣), YAO Cunfeng(姚存峰), WEI Kongfang(魏孔芳), GOU Jie(缑洁), MA Yizhun(马艺准), SHEN Tielong(申铁龙), PANG Lilong(庞立龙), SHENG Yanbin. Modification of Optical Band-gap of Si Films after Ion Irradiation[J]. Plasma Science and Technology, 2012, 14(7): 632-635. DOI: 10.1088/1009-0630/14/7/15

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Modification of Optical Band-gap of Si Films after Ion Irradiation

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China 2 Graduate university of Chinese Academy of Sciences, Beijing 100049, China

Funds: Supported by the Major State Basic Research Development Program of China (‘973’ Program, Grant No. 2010CB832902) and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No.KJCX2-YW-N35).

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Received Date: May 16, 2011

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Abstract

Abstract

Amorphous silicon (a-Si), nanocrystalline silicon (nc-Si) and hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated by using chemical vapor deposition (CVD) system. The a-Si and nc-Si thin films were irradiated with 94 MeV Xe-ions at fluences of 1.0×1011, 1.0×1012 and 1.0×1013 ions/cm2 at room temperature (RT). The nc-Si:H films were irradiated with 9 MeV Xe-ions at 1.0×1012, 1.0×1013 and 1.0×1014 Xe/cm2 at RT. For comparison, mono-crystalline silicon (c-Si) samples were also irradiated at RT with 94 MeV Xe-ions. All samples were analyzed by using an UV/VIS/NIR spectrometer and an X-ray powder diffractometer. Variations of the optical band-gap (Eg) and grain size (D) versus the irradiation fluence were investigated systematically. The obtained results showed that the optical band-gaps and grain size of the thin films changed dramatically whereas no observable change was found in c-Si samples after Xe-ion irradiation. Possible mechanism underlying the modification of silicon thin films was briefly discussed.
- ion irradiation,
- silicon film,
- optical band-gap,
- grain size

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