Experimental Determination of the ICRF Power Depositing on the Electrons in HT-7

BU Jingliang (布景亮); LIU Yong (刘永); ZHANG Xinjun (张新军); TI Ang (提昂); et al.

doi:10.1088/1009-0630/15/11/04

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Plasma Science and Technology > 2013 > 15(11): 1100-1102. > DOI: 10.1088/1009-0630/15/11/04

BU Jingliang (布景亮), LIU Yong (刘永), ZHANG Xinjun (张新军), TI Ang (提昂), et al.. Experimental Determination of the ICRF Power Depositing on the Electrons in HT-7[J]. Plasma Science and Technology, 2013, 15(11): 1100-1102. DOI: 10.1088/1009-0630/15/11/04

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Experimental Determination of the ICRF Power Depositing on the Electrons in HT-7

Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China

Funds: supported by the National Magnetic Confinement Fusion Science Program of China (Nos.2011GB107000, 2011GB107003), and partly supported by the JSPS-NRF-NSFC A3 Foresight Program in the field of Plasma Physics (NSFC No.11261140328) and National Natural Science Foundation of China (Nos.11105179, 11021565, 11275234)

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Received Date: November 04, 2012

Graphical Abstract

Abstract

Abstract

This paper reports for the first time an experimental study on the power deposition profile of the ion cyclotron range frequencies (ICRF) power depositing on electrons in HT-7. The fast Fourier transform (FFT) analysis and the break in slope (BIS) method are utilized to obtain the information of the power deposition. The results indicate that the electrons were heated directly, and the electrons absorbed around 20% of the input power of the discharge of interest.
- ICRF,
- power modulation,
- BIS