| Citation: |
Ming XU, Yi WANG, Chun LIU, Xinyang SI, Rongrong GAO, Wei LUO, Guanghui QU, Wanli JIA, Qian LIU. Photoexcited carrier dynamics in a GaAs photoconductive switch under nJ excitation[J]. Plasma Science and Technology, 2022, 24(7): 075503. DOI: 10.1088/2058-6272/ac5af8
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In this article, the bunched transport of photoexcited carriers in a GaAs photoconductive semiconductor switch (PCSS) with interdigitated electrodes is investigated under femtosecond laser excitation. Continuous outputs featuring high gain are obtained for single shots and at 1 kHz by varying the optical excitation energy. An ensemble three-valley Monte Carlo simulation is utilized to investigate the transient characteristics and the dynamic process of photoexcited carriers. It demonstrates that the presence of a plasma channel can be attributed to the bunching of high-density electron–hole pairs, which are transported in the form of a high-density filamentary current. The results provide a picture of the evolution of photoexcited carriers during transient switching. A photoinduced heat effect is analyzed, which reveals the related failure mechanism of GaAs PCSS at various repetition rates.
This work was supported in part by National Natural Science Foundation of China (Nos. 51877177 and 52007152), in part by the Scientific Research Program Funded by Shaanxi Provincial Education Department (Nos. 21JP085 and 21JP088) and the Youth Innovation Team of Shaanxi Universities, in part by the Natural Science Basic Research Plan of Shaanxi Province (Nos. 2021JZ-48 and 2020JM-462), in part by Fellowship of China Postdoctoral Science Foundation (No. 2021M702639), and in part by Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology (No. SKL2020KF01).
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