Advanced Search+
ZHANG Saiqian(张赛谦), DAI Zhongling(戴忠玲), WANG Younian(王友年). Ion Transport to a Photoresist Trench in a Radio Frequency Sheath[J]. Plasma Science and Technology, 2012, 14(11): 958-964. DOI: 10.1088/1009-0630/14/11/03
Citation: ZHANG Saiqian(张赛谦), DAI Zhongling(戴忠玲), WANG Younian(王友年). Ion Transport to a Photoresist Trench in a Radio Frequency Sheath[J]. Plasma Science and Technology, 2012, 14(11): 958-964. DOI: 10.1088/1009-0630/14/11/03

Ion Transport to a Photoresist Trench in a Radio Frequency Sheath

Funds: Supported by the National Natural Science Foundation of China (Nos. 11075029, 10975030)
More Information
  • We present a model which is used to study ion transport in capacitively coupled plasma (CCP) discharge driven by a radio-frequency (rf) source for an etching process. The model combines a collisional sheath model with a trench model. The sheath model can calculate the ion energy distributions (IEDs) and ion angular distributions (IADs) to specify the initial conditions of the ions incident into the trench domain (a simulation area near and in the trench). Then, considering the charging effect on the photoresist sidewalls and the rf-bias applied to the substrate, the electric potentials in the trench domain are computed by solving the Laplace equation. Finally, the trajectories, IEDs and IADs of ions impacting on the bottom of the trench are obtained using the trench model. Numerical results show that as the pressure increases, ions tend to strike the trench bottom with smaller impact energies and larger incident angles due to the collision processes, and the existence of the trench has distinct influences on the shape of the IEDs and IADs. In addition, as the bias amplitude increases, heights of both peaks decrease and the IEDs spread to a higher energy region.
  • Related Articles

    [1]Peng ZHANG, Ruvarashe F DAMBIRE. Competitive effect between roughness and mask pattern on charging phenomena during plasma etching[J]. Plasma Science and Technology, 2022, 24(3): 035502. DOI: 10.1088/2058-6272/ac48df
    [2]D C SEOK, S R YOO, K I LEE, Y S CHOI, Y H JUNG. Relation between etching profile and voltage–current shape of sintered SiC etching by atmospheric pressure plasma[J]. Plasma Science and Technology, 2019, 21(4): 45504-045504. DOI: 10.1088/2058-6272/aaf9e9
    [3]G C DAS. Some studies on transient behaviours of sheath formation in dusty plasma with the effect of adiabatically heated electrons and ions[J]. Plasma Science and Technology, 2017, 19(9): 95002-095002. DOI: 10.1088/2058-6272/aa750c
    [4]SUI Jiaxing (眭佳星), ZHANG Saiqian (张赛谦), LIU Zeng (刘增), YAN Jun (阎军), DAI Zhongling (戴忠玲). A Multi-Scale Study on Silicon-Oxide Etching Processes in C4F8/Ar Plasmas[J]. Plasma Science and Technology, 2016, 18(6): 666-673. DOI: 10.1088/1009-0630/18/6/14
    [5]WANG Hongyu (王虹宇), JIANG Wei (姜巍), SUN Peng (孙鹏), ZHAO Shuangyun (赵双云), LI Yang (李阳). Modeling of Perpendicularly Driven Dual-Frequency Capacitively Coupled Plasma[J]. Plasma Science and Technology, 2016, 18(2): 143-146. DOI: 10.1088/1009-0630/18/2/08
    [6]LIU Huiping(刘惠平), ZOU Xiu(邹秀), QIU Minghui(邱明辉). Sheath Criterion for an Electronegative Plasma Sheath in an Oblique Magnetic Field[J]. Plasma Science and Technology, 2014, 16(7): 633-636. DOI: 10.1088/1009-0630/16/7/01
    [7]XU Yijun (徐轶君), WU Xuemei (吴雪梅), YE Chao (叶超). Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C 4 F 8 /Ar Dual-Frequency Capacitively Coupled Plasma[J]. Plasma Science and Technology, 2013, 15(10): 1066-1070. DOI: 10.1088/1009-0630/15/10/19
    [8]ZHANG Peng (张鹏), WANG Jun (王俊), SUN Yang (孙阳), DING Zejun (丁泽军). Charging Effect in Plasma Etching Mask of Hole Array[J]. Plasma Science and Technology, 2013, 15(6): 570-576. DOI: 10.1088/1009-0630/15/6/15
    [9]ZHANG Hong, DAI Zhongling, WANG Younian. Characteristics of a Collisional Sheath Biased by a Dual Frequency Source[J]. Plasma Science and Technology, 2011, 13(5): 513-518.
    [10]XIANG Nong, HU Yemin, OU Jing. Bohm criterion for collisionless sheaths in two-ion-species plasmas[J]. Plasma Science and Technology, 2011, 13(4): 385-391.

Catalog

    Article views (452) PDF downloads (904) Cited by()

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return