Continuous compositional spread investigation of SiC-based thin films prepared by MW-ECR plasma enhanced magnetron co-sputtering

Hanghang WANG (王行行); Liyan ZHANG (张丽艳); Wenqi LU (陆文琪); Jun XU (徐军)

doi:10.1088/2058-6272/ab618a

Plasma Science and Technology > 2020 > 22(3): 34010-034010. > DOI: 10.1088/2058-6272/ab618a

Hanghang WANG (王行行), Liyan ZHANG (张丽艳), Wenqi LU (陆文琪), Jun XU (徐军). Continuous compositional spread investigation of SiC-based thin films prepared by MW-ECR plasma enhanced magnetron co-sputtering[J]. Plasma Science and Technology, 2020, 22(3): 34010-034010. DOI: 10.1088/2058-6272/ab618a

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Continuous compositional spread investigation of SiC-based thin films prepared by MW-ECR plasma enhanced magnetron co-sputtering

¹ Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, People's Republic of China
² School of Chemical Engineering, Dalian University of Technology, Dalian 116024, People's Republic of China

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Received Date: September 09, 2019
Revised Date: December 11, 2019
Accepted Date: December 12, 2019

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Abstract

Abstract

A kind of combinatorial material methodology, also known as continuous compositional spread method, was employed to investigate the relationship between the optical band gap and composition of SiC thin films. A wide range of Si_xC_y thin films with different carbon contents have been successfully deposited in a single deposition by carefully arranging the sample position on the substrate holder. The films were characterized by surface profiler, x-ray photoelectron spectroscopy, ultraviolet–visible spectroscopy, fourier transform infrared spectroscopy and Raman spectroscopy. The carbon content y increases linearly from 0.28 to 0.72 while the sample position changed from 85 to 175 mm, the optical band gap changed between 1.27 and 1.99 eV, the maximum value corresponded to the stoichiometric SiC sample at the position of 130 mm, which has the highest Si−C bond density of 11.7 × 10²² cm^–3. The C poor and C rich Si_xC_y samples with y value less and larger than 0.5 were obtained while samples deviated from the position 130 mm, the optical band gap decreased with the Si−C bond density.

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Continuous compositional spread investigation of SiC-based thin films prepared by MW-ECR plasma enhanced magnetron co-sputtering