Effect of spin on the instability of THz plasma waves in field-effect transistors under non-ideal boundary conditions

Liping ZHANG; Jiani LI; Jiangxu FENG; Junyan SU

doi:10.1088/2058-6272/ace677

Plasma Science and Technology > 2023 > 25(12): 125002. > DOI: 10.1088/2058-6272/ace677

Liping ZHANG, Jiani LI, Jiangxu FENG, Junyan SU. Effect of spin on the instability of THz plasma waves in field-effect transistors under non-ideal boundary conditions[J]. Plasma Science and Technology, 2023, 25(12): 125002. DOI: 10.1088/2058-6272/ace677

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Effect of spin on the instability of THz plasma waves in field-effect transistors under non-ideal boundary conditions

School of Sciences, Lanzhou University of Technology, Lanzhou 730050, People's Republic of China

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Corresponding author:
Liping ZHANG, E-mail: zhanglp@lut.edu.cn
Received Date: February 20, 2023
Revised Date: July 10, 2023
Accepted Date: July 10, 2023
Available Online: January 04, 2024
Published Date: September 14, 2023

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Abstract

Abstract

Terahertz (THz) radiation can be generated due to the instability of THz plasma waves in field-effect transistors (FETs). In this work, we discuss the instability of THz plasma waves in the channel of FETs with spin and quantum effects under non-ideal boundary conditions. We obtain a linear dispersion relation by using the hydrodynamic equation, Maxwell equation and spin equation. The influence of source capacitance, drain capacitance, spin effects, quantum effects and channel width on the instability of THz plasma waves under the non-ideal boundary conditions is investigated in great detail. The results of numerical simulation show that the THz plasma wave is unstable when the drain capacitance is smaller than the source capacitance; the oscillation frequency with asymmetric boundary conditions is smaller than that under non-ideal boundary conditions; the instability gain of THz plasma waves becomes lower under non-ideal boundary conditions. This finding provides a new idea for finding efficient THz radiation sources and opens up a new mechanism for the development of THz technology.
- the instability of THz plasma waves,
- spin effects,
- non-ideal boundary conditions,
- quantum effects,
- field-effect transistors

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Acknowledgments

This work was funded by National Natural Science Foundation of China (No. 12065015) and the Hongliu First-level Discipline Construction Project of Lanzhou University of Technology.

References (31)

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