Nanocrystalline Silicon Thin Films Fabricated at 80 °C by Using Electron Cyclotron Resonance Chemical Vapor Deposition

I. Y. Y. BU; A. J. FLEWITT; W. I. MILINE

Plasma Science and Technology > 2010 > 12(5): 608-613.

I. Y. Y. BU, A. J. FLEWITT, W. I. MILINE. Nanocrystalline Silicon Thin Films Fabricated at 80 °C by Using Electron Cyclotron Resonance Chemical Vapor Deposition[J]. Plasma Science and Technology, 2010, 12(5): 608-613.

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Nanocrystalline Silicon Thin Films Fabricated at 80 °C by Using Electron Cyclotron Resonance Chemical Vapor Deposition

1.
Department of Microelectronics Engineering, National Kaohsiung Marine University, 81157 Nanzih District, Kaohsiung City, Taiwan, China
2.
Electrical Engineering Division, Engineering Department, Cambridge University, Cambridge, CB3 0FA, UK

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Abstract

Abstract

Deposition of nanocrystalline silicon (nc Si) on glass at very low temperatures by electron cyclotron resonance (ECR) plasma enhanced chemical vapour deposition (PECVD) was investigated. It was shown that nc Si could be deposited from hydrogen diluted silane gas at a substrate temperature of 80 °C with a crystalline fraction up to 80% and a lateral grain size of around 50 nm. This was achieved by growing the nc Si in a low pressure regime which ensured that mono-silyl species were the dominant deposition precursor. Furthermore, a high flux of energetic hydrogen ions was required to induce crystallisation of the silicon material through a chemical annealing process.
- low temperature,
- nanocrystalline silicon,
- ECR

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