Characterization of Vacuum Ultraviolet (VUV) Radiation for the Development of a Fluorescent Lamp

Hasina KHATUN; A K SHARMA; P K BARHAI

Plasma Science and Technology > 2011 > 13(4): 480-485.

Hasina KHATUN, A K SHARMA, P K BARHAI. Characterization of Vacuum Ultraviolet (VUV) Radiation for the Development of a Fluorescent Lamp[J]. Plasma Science and Technology, 2011, 13(4): 480-485.

Citation:

Hasina KHATUN, A K SHARMA, P K BARHAI. Characterization of Vacuum Ultraviolet (VUV) Radiation for the Development of a Fluorescent Lamp[J]. Plasma Science and Technology, 2011, 13(4): 480-485.

Citation:

Hasina KHATUN, A K SHARMA, P K BARHAI. Characterization of Vacuum Ultraviolet (VUV) Radiation for the Development of a Fluorescent Lamp[J]. Plasma Science and Technology, 2011, 13(4): 480-485.

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Characterization of Vacuum Ultraviolet (VUV) Radiation for the Development of a Fluorescent Lamp

1 Microwave Tubes Area, Central Electronics Engineering Research Institute, Pilani-333031, India 2 Applied Physic Department, Birla Institute of Technology, Ranchi- 835215, India

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Received Date: March 28, 2010

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Abstract

Abstract

A negative unipolar pulsed voltage is applied to study internal electrical parameters of the xenon filled dielectric barrier discharge (DBD) sources. The VUV radiation emitted from these sources is characterized by means of the photoluminescence intensity of the red phosphor pellet. The red phosphor converts the VUV radiation into visible radiation and the emission spectra include a peak at 619.56 nm. The emission characteristics of the red phosphor are analyzed in terms of the pressure-distance (pd), rise time and frequency of the pulsed voltage waveform. The emission intensity measured at different operational conditions confirms that the formation and decay of the xenon excimer, Xe2*, increases with the increase in reduced electric field, E/N. After exceeding certain limits of E/N, the intensity of Xe2* decreases rapidly.
- Dielectric Barrier Discharge,
- vacuum ultraviolet,
- photoluminescence,
- RGB.

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