Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

Peiyu JI (季佩宇); Jun YU (於俊); Tianyuan HUANG (黄天源); Chenggang JIN (金成刚); Yan YANG (杨燕); Lanjian ZHUGE (诸葛兰剑); Xuemei WU (吴雪梅)

doi:10.1088/2058-6272/aa94bd

Plasma Science and Technology > 2018 > 20(2): 25505-025505. > DOI: 10.1088/2058-6272/aa94bd

Peiyu JI (季佩宇), Jun YU (於俊), Tianyuan HUANG (黄天源), Chenggang JIN (金成刚), Yan YANG (杨燕), Lanjian ZHUGE (诸葛兰剑), Xuemei WU (吴雪梅). Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition[J]. Plasma Science and Technology, 2018, 20(2): 25505-025505. DOI: 10.1088/2058-6272/aa94bd

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Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

1 College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, People’s Republic of China 2 Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, People’s Republic of China 3 Analysis and Testing Center, Soochow University, Suzhou 215123, People’s Republic of China

Funds: This work is supported by National Natural Science Foundation of China (Nos. 11175126, 11375126, 11435009, 11505123),the National Magnetic Confinement Fusion Program of China (Nos. 2014GB106005, 2010GB106000), a project funded by China Postdoctoral Science Foundation, and a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD).

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Received Date: August 31, 2017

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Abstract

Abstract

A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH₄ gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 μmh^-1 at the CH₄flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and H_αradicals play an important role in the growth of DLC films. The results show that the Hα radicals are beneficial to the formation and stabilization of C=C bond from sp² to sp³.
- helicon wave plasma,
- diamond-like carbon film,
- sp³ content,
- Raman spectra

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References (37)

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